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Advancing Power Semiconductor Technology

PhD Student GE Yuchu Earned Best Poster Award at IEEE International Symposium on Power Semiconductor Devices and ICs

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Electronic and Computer Engineering PhD student Ge Yuchu (center) at IEEE ISPSD 2026
Electronic and Computer Engineering PhD student Ge Yuchu (center) at IEEE ISPSD 2026 [Download Photo]
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Electronic and Computer Engineering (ECE) PhD Student GE Yuchu received the Best Poster Award at the IEEE International Symposium on Power Semiconductor Devices and ICs 2026 (IEEE ISPSD 2026), which was held on May 24-28 in Las Vegas, US. He is recognized for his paper titled “Thermal Management of Parallel SiC MOSFETs Using Time-Domain Gate Resistance Modulation”. His supervisor is Prof. ZHANG Weijia, Assistant Professor of the ECE Department.

ISPSD is the premier forum for technical discussions in all areas of power semiconductor devices and power integrated circuits, covering topics of device physics, modeling, design, fabrication, materials, packaging and integration, device reliability, and device/circuit interactions.