HKUST Made a Strong Presence at 2025 IEEE IEDM in San Francisco
The 71st IEEE International Electron Devices Meeting (IEDM), a premier global forum for showcasing groundbreaking advancements in electronic device technology and technically sponsored by the IEEE Electron Devices Society, was held from December 6 to 10, 2025, in San Francisco, USA. The Department of Electronic and Computer Engineering (ECE) at the Hong Kong University of Science and Technology (HKUST) played a prominent role at this prestigious event, presenting three papers across technical sessions, including those on semiconductor devices and neuromorphic computing.
Research highlights
The following three research papers were represented by ECE PhD students and postdoc researchers at the IEDM:
• 26-2 | A Crosstalk-Free GaN-on-Si Power Integration Platform for Integrated Half-Bridge Circuits and Bi-directional Switches
Authors: WU Zheng, ZHOU Zongjie, DENG Longge, CHEN Tao, NG Yat-Hon, CHENG Yan, GENG Yutao, Prof. Kevin CHEN Jing
• 20-1 | Fully Analog In-Memory Annealing Ising Machine with Unified Deterministic and Probabilistic Computing Array Using CMOS-integrated VCMA-MTJ
Authors: HOU Yaoru, XIAO Zhihua, WU Xuezhao, TONG Zihan, WANG Shuyu, CHAN Ching-Ho, LU Yunyang, ZHANG Yiyang, CHEN Chin-Chung, ZHU Zheng, Albert LEE, WU Di, CAI Hao, Prof. SHAO Qiming
• 43-5 | Monolithic 3D-Integrated Neuromorphic Biosignal Processor Using Hydrogen-Controlled Dual-Gate TFTs on a Flexible Substrate
Authors: SHI Runxiao, GUO Shiran, WANG Linghan, LIU Siyang, WU Wangran, HU Yushen, SUN Weifeng, Prof. Man WONG
Faculty contributions
In addition to ECE-led technical presentations, four ECE faculty members attended the IEDM and contributed significantly to the electron device community by serving in the IEDM and the IEEE Electron Devices Society.
Prof. Kevin CHEN Jing is a member of the Power, Microwave/Mm-Wave, and Analog Devices/Systems technical committee. He is an IEEE fellow and the editor of the IEEE Transactions on Electron Devices. Additionally, he co-authored two other IEDM papers:
• 26-4 | E-Mode p-GaN Gate Punch-Through HEMT with Robust Non-Destructive Drain Breakdown, in collaboration with a team led by an ECE alumnus from Peking University.
• 36-1 | First Integration of GaN Low-Voltage PA MMIC into Mobile Handsets with Superior Efficiency Over 50%, in collaboration with a team led by Dynax Semiconductor Inc.
Prof. Mansun CHAN serves as the Vice President of the Electron Device Society Educational Activities. He is a Distinguished Lecturer and a Fellow of the IEEE. He co-authored one IEDM paper, titled “32-3 | Nonlinear Ferroelectric Diode Offers High Security in Accurate and Energy-Efficient Compute-in-Memory”, collaborating with a team led by an ECE alumnus from HKUST (Guangzhou).
Prof. Man WONG attended the EDS Board of Governors meeting as the editor-in-chief of the IEEE Journal of the Electron Devices Society (J-EDS).
Prof. SHAO Qiming presented at the EDS Board of Governors meeting as the chair of the IEEE EDS Young Professionals Committee. He also co-organized the EDS Women in Electron Devices/Young Professionals event at IEDM.
HKUST gathering
Many ECE alumni who have made significant contributions to electronic device technology were also present at the IEDM 2025. The ECE Department hosted a gathering for HKUST alumni and friends, providing an opportunity to network and reconnect.